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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdt64/a/b/c description collector current -i c = - 12a high dc current gain-h fe = 1000(min)@ i c = -5a complement to type bdt65/a/b/c applications designed for audio output stages and general purpose amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdt64 -60 bdt64a -80 BDT64B -100 v cer collector-emitter voltage bdt64c -120 v bdt64 -60 bdt64a -80 BDT64B -100 v ceo collector-emitter voltage bdt64c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -12 a i cm collector current-peak -20 a i b b base current-continuous -0.5 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdt64/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt64 -60 bdt64a -80 BDT64B -100 v (br)ceo collector-emitter breakdown voltage bdt64c i c = -30ma ;i b =0 b -120 v v ce(sat)-1 collector-emitter saturation voltage i c = -5a; i b = -20ma b -2.0 v v ce(sat)-2 collector-emitter saturation voltage i c = -10a; i b = -100ma -3.0 v v be( on ) base-emitter on voltage i c = -5a ; v ce = -4v -2.5 v v ecf-1 c-e diode forward voltage i f = -5a -2.0 v v ecf-2 c-e diode forward voltage i f = -12a -2.0 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 -0.2 ma i cbo collector cutoff current v cb = v cbomax ;i e = 0 v cb = 1 / 2 v cbomax ;i e = 0;t c = 150 -0.4 -2.0 ma i ebo emitter cutoff current v eb = -5v; i c =0 -5 ma h fe-1 dc current gain i c = -1a ; v ce = -4v 1500 h fe-2 dc current gain i c = -5a ; v ce = -4v 1000 h fe-3 dc current gain i c = -12a ; v ce = -4v 750 c ob output capacitance i e = 0 ; v cb = -10v; f test =1mhz 200 pf switching times t on turn-on time 0.5 2 s t off turn-off time i c = -5a; i b1 = -i b2 = -20ma; v cc = -30v 2.5 5 s isc website www.iscsemi.cn 2 |
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